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IPD50N04S308ATMA1

40V|50A (Tc)|68W (Tc)
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MOSFET N-CH 40V 50A TO252-3

规格参数

品牌
Infineon Technologies
封装
PG-TO252-3
包装方式
—

库存总量

375个

12小时发货

起订量:1 个

认证与授权

产品视频

了解 Infineon Technologies 的 IPD50N04S308ATMA1 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。

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技术规格

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 40µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2350pF @ 25V
FET Feature-
Power Dissipation (Max)68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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