Heisener Electronics
BOM

IPD15N06S2L64ATMA1

55V|19A (Tc)|47W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 55V 19A TO252-3

Specifications

Brand
Infineon Technologies
Package
PG-TO252-3
Packaging
—
Weight
—

Total Inventory

113pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPD15N06S2L64ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs64mOhm @ 13A, 10V
Vgs(th) (Max) @ Id2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds354pF @ 25V
FET Feature-
Power Dissipation (Max)47W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Recommended Products

CMF551K3200BEEA

CMF551K3200BEEA

RES 1.32K OHM 1/2W 0.1% AXIAL

1808J0500221KDT

1808J0500221KDT

CAP CER 220PF 50V X7R 1808

MP1-3N-3N-0R

MP1-3N-3N-0R

MP CONFIGURABLE POWER SUPPLY

CAR2512TEBXXZ01A_1

CAR2512TEBXXZ01A_1

AC/DC CONVERTER 12V 2500W

VB60100C-E3-4W

VB60100C-E3-4W

DIODE ARRAY SCHOTTKY 100V TO263

28-6552-11

28-6552-11

CONN IC DIP SOCKET ZIF 28POS GLD

09120080901

09120080901

CONN BASE SIDE ENTRY PG16

TVP00RQW-21-75P-LC

TVP00RQW-21-75P-LC

CONN RCPT HSG MALE 4POS PNL MT

EMC28DREI-S734

EMC28DREI-S734

CONN EDGE DUAL FMALE 56POS 0.100

GCC35DRTI-S734

GCC35DRTI-S734

CONN EDGE DUAL FMALE 70POS 0.100