IPD09N03LB-G

30V|50A (Tc)|58W (Tc)

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MOSFET N-CH 30V 50A DPAK

244pcs

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Purchase Quantity

MOQ: 1 pcs

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Manufacturer	Infineon Technologies
Series	OptiMOS™
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 15V
FET Feature	-
Power Dissipation (Max)	58W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63