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100V|1A (Tj)|-
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MOSFET N-CH 100V 1A SAWN ON FOIL
Specifications
- Brand
- Infineon Technologies
- Package
- Sawn on foil
- Packaging
- —
- Weight
- —
Total Inventory
342pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPC045N10L3X1SA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tj) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 4.5V | |
| Vgs(th) (Max) @ Id | 2.1V @ 33µA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| FET Feature | - | |
| Power Dissipation (Max) | - | |
| Operating Temperature | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | Sawn on foil | |
| Package / Case | Die |
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