Heisener Electronics
BOM

IPBE65R115CFD7AATMA1

650 V|21A (Tc)|114W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

AUTOMOTIVE_COOLMOS PG-TO263-7

Specifications

Brand
Infineon Technologies
Package
PG-TO263-7-11
Packaging
—
Weight
—

Total Inventory

2,424pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPBE65R115CFD7AATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs115mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id4.5V @ 490µA
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1950 pF @ 400 V
FET Feature-
Power Dissipation (Max)114W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7-11
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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