Contact
Send MessageIPB80P04P4L04ATMA2
40 V|80A (Tc)|125W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET P-CH 40V 80A TO263-3
Specifications
- Brand
- Infineon Technologies
- Package
- PG-TO263-3-2
- Packaging
- —
- Weight
- —
Total Inventory
23,196pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPB80P04P4L04ATMA2 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS®-P2 | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 40 V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 80A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 176 nC @ 10 V | |
| Vgs (Max) | +5V, -16V | |
| Input Capacitance (Ciss) (Max) @ Vds | 11570 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 125W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-3-2 | |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Recommended Products
RES 160K OHM 0.5% 1/10W 0603
MEMS OSC XO 16.0000MHZ LVCMOS LV
CAP CER 18PF 50V C0G/NP0 2225
CAP CER 0.18UF 63V X7R 0805
IC MCU 8BIT 32KB FLASH 44QFN
DIODE ZENER 6.2V 500MW SOD123FL
RECP ASSY
CONN RCPT MALE 37POS GOLD CRIMP
CONN PLG HSG FMALE 16POS INLINE
PROTOTYPE
