Contact
Send MessageIPB80N06S2L11ATMA2
55V|80A (Tc)|158W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 55V 80A TO263-3
Specifications
- Brand
- Infineon Technologies
- Package
- PG-TO263-3-2
- Packaging
- —
- Weight
- —
Total Inventory
484pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPB80N06S2L11ATMA2 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 55V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 10.7mOhm @ 40A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 93µA | |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2075pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 158W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-3-2 | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Recommended Products
RES SMD 51K OHM 1% 1/4W 1206
MEMS OSC XO 155.5200MHZ LVCMOS
CAP FILM 0.68UF 20% 900VAC SCREW
IC GATE DVR 7.6A LO SIDE SOT23-6
IC UART DUAL W/FIFO 44-PLCC
RF DIODE PIN 200V 250MW SOT5
DIODE SCHOTTKY 80V 5A DO201AD
TRANS PNP 25V 1A TO-92
CONN 2.92MM JK STR 50OHM COMPRES
ER 6C 3#16 3#8 PIN RECP BOX
