IPB80N06S2L06ATMA1

55V|80A (Tc)|250W (Tc)

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MOSFET N-CH 55V 80A TO263-3

478pcs

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MOQ: 1 pcs

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Manufacturer	Infineon Technologies
Series	OptiMOS™
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6mOhm @ 69A, 10V
Vgs(th) (Max) @ Id	2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3800pF @ 25V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB