Heisener Electronics
BOM

IPB65R155CFD7ATMA1

650 V|15A (Tc)|77W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

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Specifications

Brand
Infineon Technologies
Package
PG-TO263-3
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPB65R155CFD7ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ CFD7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs155mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id4.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs28 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1283 pF @ 400 V
FET Feature-
Power Dissipation (Max)77W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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