Heisener Electronics
BOM

IPB60R125C6

600V|30A (Tc)|219W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 600V 30A TO263

Specifications

Brand
Infineon Technologies
Package
PG-TO263-2
Packaging
—
Weight
—

Total Inventory

15,852pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPB60R125C6 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125 mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs96nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2127pF @ 100V
FET Feature-
Power Dissipation (Max)219W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-2
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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