Contact
Send MessageIPB60R120C7ATMA1
650V|19A (Tc)|92W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 650V 19A TO263-3
Specifications
- Brand
- Infineon Technologies
- Package
- PG-TO263-3
- Packaging
- —
- Weight
- —
Total Inventory
313pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPB60R120C7ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | CoolMOS™ C7 | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 7.8A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 390µA | |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 400V | |
| FET Feature | - | |
| Power Dissipation (Max) | 92W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-3 | |
| Package / Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
Recommended Products
RES 86.6K OHM 1/8W 1% AXIAL
RES 6.62K OHM 1/8W .5% AXIAL
RES 0.084 OHM 5% 1/3W 1206
RES SMD 39.2 OHM 1% 1W 1218
CAP FILM 0.047UF 10% 630VDC RAD
CAP CER 0.5PF 50V NP0 0805
DC DC CONVERTER 24V 100W
IC RAM 1M PARALLEL 44TSOP2
CONN RCPT HSNG FMALE 7POS PNL MT
CONN RCPT HSNG MALE 19POS PNL MT
