Heisener Electronics
BOM

IPB45P03P4L11ATMA2

30 V|45A (Tc)|58W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET_(20V 40V) PG-TO263-3

Specifications

Brand
Infineon Technologies
Package
PG-TO263-3-2
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPB45P03P4L11ATMA2 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.8mOhm @ 45A, 10V
Vgs(th) (Max) @ Id2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Vgs (Max)+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds3770 pF @ 25 V
FET Feature-
Power Dissipation (Max)58W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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