Heisener Electronics
BOM

IPB45N06S4L08ATMA1

60V|45A (Tc)|71W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 60V 45A TO263-3

Specifications

Brand
Infineon Technologies
Package
PG-TO263-3-2
Packaging
—
Weight
—

Total Inventory

171pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPB45N06S4L08ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.9mOhm @ 45A, 10V
Vgs(th) (Max) @ Id2.2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs64nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds4780pF @ 25V
FET Feature-
Power Dissipation (Max)71W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recommended Products

MCR03EZPFX8203

MCR03EZPFX8203

RES SMD 820K OHM 1% 1/10W 0603

RP73D1J34RBTG

RP73D1J34RBTG

RES SMD 34 OHM 0.1% 1/10W 0603

416F500XXADR

416F500XXADR

CRYSTAL 50.000 MHZ 18PF SMT

GA0805A181FBCBT31G

GA0805A181FBCBT31G

CAP CER 180PF 200V C0G/NP0 0805

35YXJ1000M12-5X20

35YXJ1000M12-5X20

CAP ALUM 1000UF 20% 35V RADIAL

GBU6M-M3-51

GBU6M-M3-51

BRIDGE RECT 1PHASE 1KV 6A GBU

MS4800B-40-1080

MS4800B-40-1080

SAFETY LIGHT CURTAIN

851-83-020-40-001101

851-83-020-40-001101

PCB CONN SURFACE MOUNT 1.27MM

PLA1G521003

PLA1G521003

CIRCULAR

D38999-26WJ20PE_64

D38999-26WJ20PE_64

CONN PLUG 30POS STRGHT W/PINS