Heisener Electronics
BOM

IPB330P10NMATMA1

100 V|6.9A (Ta), 62A (Tc)|3.8W (Ta), 300W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRENCH >=100V PG-TO263-3

Specifications

Brand
Infineon Technologies
Package
PG-TO263-3
Packaging
—
Weight
—

Total Inventory

1,689pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPB330P10NMATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C6.9A (Ta), 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs33mOhm @ 53A, 10V
Vgs(th) (Max) @ Id4V @ 5.55mA
Gate Charge (Qg) (Max) @ Vgs236 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11000 pF @ 50 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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