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100 V|2.9A (Ta), 13.8A (Tc)|3.8W (Ta), 83W (Tc)
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TRENCH >=100V PG-TO263-3
Specifications
- Brand
- Infineon Technologies
- Package
- PG-TO263-3
- Packaging
- —
- Weight
- —
Total Inventory
5,940pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPB19DP10NMATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
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Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta), 13.8A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 12A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1.04mA | |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.8W (Ta), 83W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-3 | |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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