Heisener Electronics
BOM

IPB120P04P4L03ATMA1

40V|120A (Tc)|136W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET P-CH 40V 120A TO263-3

Specifications

Brand
Infineon Technologies
Package
D²PAK (TO-263AB)
Packaging
—
Weight
—

Total Inventory

13,595pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPB120P04P4L03ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2.2V @ 340µA
Gate Charge (Qg) (Max) @ Vgs234nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds15000pF @ 25V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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