Heisener Electronics
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IPB090N06N3-G

60V|50A (Tc)|71W (Tc)
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MOSFET N-CH 60V 50A TO263-3

Specifications

Brand
Infineon Technologies
Package
PG-TO263-2
Packaging
—
Weight
—

Total Inventory

3,136pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPB090N06N3-G from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 34µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2900pF @ 30V
FET Feature-
Power Dissipation (Max)71W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-2
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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