Contact
Send MessageIPB080N03LGATMA1
30V|50A (Tc)|47W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 30V 50A TO263-3
Specifications
- Brand
- Infineon Technologies
- Package
- D²PAK (TO-263AB)
- Packaging
- —
- Weight
- —
Total Inventory
1,771pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPB080N03LGATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 15V | |
| FET Feature | - | |
| Power Dissipation (Max) | 47W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D²PAK (TO-263AB) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Recommended Products
OSC DCTCXO PROGRAMMABLE
CAP MICA 91000PF 100V RADIAL
CAP CER 0.82UF 250V X7R 2225
CAP ALUM 100UF 20% 16V SMD
650V 6A SIC SBD
TVS DIODE 23.1V 37.5V DO214AC
DIODE, 1.5A, 600V, AEC-Q101, DO-
TERM BLOCK HDR 2POS VERT 5.08MM
CONN EDGE DUAL FMALE 12POS 0.156
DUAL, 1MHZ OP AMP, E TEMP
