Contact
Send MessageIPB049N06L3GATMA1
60V|80A (Tc)|115W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 60V 80A TO263-3
Specifications
- Brand
- Infineon Technologies
- Package
- D²PAK (TO-263AB)
- Packaging
- —
- Weight
- —
Total Inventory
390pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPB049N06L3GATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 80A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 58µA | |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 8400pF @ 30V | |
| FET Feature | - | |
| Power Dissipation (Max) | 115W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D²PAK (TO-263AB) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Recommended Products
RES SMD 681 OHM 0.1% 1/8W 0805
RES SMD 365 OHM 0.5% 1/10W 0603
XTAL OSC VCXO 622.0800MHZ LVPECL
MEMS OSC PRG SSXO LVCMOS DS 1.8V
SENSOR OPTICAL 6MM MODULE SLOT
CONN BARRIER STRP 16CIRC 0.438"
LOW PROFILE .025" SQUARE STRIPS
CONN PLUG 4POS INLINE RA PIN
8D 11C 2#20 9#10 SKT PLUG
CONN PLUG HSG FMALE 41POS INLINE
Datasheet & Documents
ipb049n06l3gatma1.pdf
PDF Document · 10 pages
