IPB048N06LGATMA1

60V|100A (Tc)|300W (Tc)

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MOSFET N-CH 60V 100A TO-263

465pcs

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Purchase Quantity

MOQ: 1 pcs

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Manufacturer	Infineon Technologies
Series	OptiMOS™
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	225nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7600pF @ 30V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB