Heisener Electronics
BOM

IPB030N08N3GATMA1

80V|160A (Tc)|214W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 80V 160A TO263-7

Specifications

Brand
Infineon Technologies
Package
PG-TO263-7
Packaging
—
Weight
—

Total Inventory

2,445pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPB030N08N3GATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.5V @ 155µA
Gate Charge (Qg) (Max) @ Vgs117nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8110pF @ 40V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

Recommended Products

CRGV2512J270K

CRGV2512J270K

RES SMD 270K OHM 5% 1W 2512

LGJ12575TS-331M1R0-H

LGJ12575TS-331M1R0-H

FIXED IND 330UH 1.1A 340 MOHM

PLX1D121MCL1TD

PLX1D121MCL1TD

CAP ALUM POLY 120UF 20% 20V T/H

VJ0603A102JNXAT2M

VJ0603A102JNXAT2M

CAP CER 1000PF 25V C0G/NP0 0603

C1206X474KMREC7210

C1206X474KMREC7210

CAP CER 1206 470NF 63V X7R 10%

ASLD321102DNUR

ASLD321102DNUR

30MM SS 3POS SRL 12V 2NC RED

TLV2322IPWR

TLV2322IPWR

IC OPAMP GP 2 CIRCUIT 8TSSOP

SPD06N60C3BTMA1

SPD06N60C3BTMA1

MOSFET N-CH 650V 6.2A TO-252

SM5S33HE3-2D

SM5S33HE3-2D

TVS DIODE 33V 59V DO218AB

EW-10-12-T-S-375

EW-10-12-T-S-375

.025" BOARD SPACERS