Contact
Send MessageIPB026N10NF2SATMA1
100 V|162A (Tc)|250W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
TRENCH >=100V
Specifications
- Brand
- Infineon Technologies
- Package
- PG-TO263-3
- Packaging
- —
- Weight
- —
Total Inventory
4,932pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPB026N10NF2SATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | StrongIRFET™ 2 | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 162A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 2.65mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 3.8V @ 169µA | |
| Gate Charge (Qg) (Max) @ Vgs | 154 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 7300 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 250W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-3 | |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Recommended Products
RES 2.2M OHM 1% 1/4W AXIAL
RES SMD 178 OHM 1% 1/2W 0805
RES 340 OHM 1% 1/8W 0805
POT 20K OHM 1/20W LOGARITHMIC
MEMS OSC XO 30.0000MHZ H/LV-CMOS
MEMS OSC PRG SSXO LVCMOS CS 2.5V
IC LI-ION CHARGE MGMT 20-HTSSOP
IC REG PWM CTRLR 2OUT 48QFN
CONN HDR 55POS 0.100 T/H
CONN EDGE DUAL FMALE 30POS 0.156
