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IPB024N10N5ATMA1

100V|180A (Tc)|250W (Tc)
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MOSFET N-CH 100V 180A TO263-7

Specifications

Brand
Infineon Technologies
Package
PG-TO263-7
Packaging
—
Weight
—

Total Inventory

135pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPB024N10N5ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 90A, 10V
Vgs(th) (Max) @ Id3.8V @ 183µA
Gate Charge (Qg) (Max) @ Vgs138nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10200pF @ 50V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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