Heisener Electronics
BOM

IPB024N08N5ATMA1

80V|120A (Tc)|214W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 80V TO263-3

Specifications

Brand
Infineon Technologies
Package
D²PAK (TO-263AB)
Packaging
—
Weight
—

Total Inventory

142pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPB024N08N5ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.8V @ 154µA
Gate Charge (Qg) (Max) @ Vgs123nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8970pF @ 40V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recommended Products

RLR07C6043FRB14

RLR07C6043FRB14

RES 604K OHM 1% 1/4W AXIAL

LK21251R8J-T

LK21251R8J-T

FIXED IND 1.8UH 80MA 450 MOHM

SIT9121AC-2B3-25E120-000000Y

SIT9121AC-2B3-25E120-000000Y

MEMS OSC XO 120.0000MHZ LVDS SMD

KXG350VB6R8M10X16LL

KXG350VB6R8M10X16LL

CAP ALUM 6.8UF 20% 350V RADIAL

7301P3DCQE

7301P3DCQE

SWITCH TOGGLE 3PDT 5A 120V

ISL22329WFU10Z_222

ISL22329WFU10Z_222

IC DGTL POT 10KOHM 128TAP 10MSOP

8LT515Z18AA

8LT515Z18AA

8LT 18C 18#20 PIN PLUG

TSL265

TSL265

PHOTO IC

M3Z4V7C

M3Z4V7C

SOD-323F, 200MW, 5%, ZENER DIODE