Heisener Electronics
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IPB016N06L3GATMA1

60V|180A (Tc)|250W (Tc)
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MOSFET N-CH 60V 180A TO263-7

Specifications

Brand
Infineon Technologies
Package
PG-TO263-7
Packaging
—
Weight
—

Total Inventory

264pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPB016N06L3GATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2.2V @ 196µA
Gate Charge (Qg) (Max) @ Vgs166nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds28000pF @ 30V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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