Heisener Electronics
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IPB015N04L-G

40V|120A (Tc)|250W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 40V 120A TO263-3

Specifications

Brand
Infineon Technologies
Package
PG-TO263-2
Packaging
—
Weight
—

Total Inventory

390,000pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPB015N04L-G from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs346nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds28000pF @ 25V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-2
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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