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IPB009N03L-G

30V|180A (Tc)|250W (Tc)
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MOSFET N-CH 30V 180A TO263-7

规格参数

品牌
Infineon Technologies
封装
PG-TO263-7-3
包装方式
—

库存总量

8,772个

12小时发货

起订量:1 个

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产品视频

了解 Infineon Technologies 的 IPB009N03L-G 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。

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技术规格

ManufacturerInfineon Technologies
SeriesOptiMOS?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs0.95 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs227nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds25000pF @ 15V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7-3
Package / CaseTO-263-7, D2Pak (6 Leads + Tab), TO-263CB

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