Heisener Electronics
BOM

IPAW60R280CEXKSA1

600V|19.3A (Tc)|32W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 600V TO220-3

Specifications

Brand
Infineon Technologies
Package
PG-TO220 Full Pack, Wide Creepage
Packaging
—
Weight
—

Total Inventory

827pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPAW60R280CEXKSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C19.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds950pF @ 100V
FET FeatureSuper Junction
Power Dissipation (Max)32W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220 Full Pack, Wide Creepage
Package / CaseTO-220-3 Full Pack, Variant

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