Heisener Electronics
BOM

IPA95R450PFD7XKSA1

950 V|7.2A (Tc)|30W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 950V 7.2A TO220-3

Specifications

Brand
Infineon Technologies
Package
PG-TO220-3-313
Packaging
—
Weight
—

Total Inventory

1,425pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPA95R450PFD7XKSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)950 V
Current - Continuous Drain (Id) @ 25°C7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id3.5V @ 360µA
Gate Charge (Qg) (Max) @ Vgs43 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1230 pF @ 400 V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-313
Package / CaseTO-220-3 Full Pack

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