Heisener Electronics
BOM

IPA80R310CEXKSA1

800V|6.8A (Tc)|35W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 800V TO-220-3

Specifications

Brand
Infineon Technologies
Package
PG-TO220 Full Pack
Packaging
—
Weight
—

Total Inventory

403pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPA80R310CEXKSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ CE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs310mOhm @ 11A, 10V
Vgs(th) (Max) @ Id3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs91nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds2320pF @ 100V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220 Full Pack
Package / CaseTO-220-3 Full Pack

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