Contact
Send MessageIMZA65R057M1HXKSA1
650 V|35A (Tc)|133W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
SILICON CARBIDE MOSFET, PG-TO247
Specifications
- Brand
- Infineon Technologies
- Package
- PG-TO247-4-3
- Packaging
- —
- Weight
- —
Total Inventory
570pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IMZA65R057M1HXKSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | CoolSiC™ | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 16.7A, 18V | |
| Vgs(th) (Max) @ Id | 5.7V @ 5mA | |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 18 V | |
| Vgs (Max) | +20V, -2V | |
| Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 400 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 133W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO247-4-3 | |
| Package / Case | TO-247-4 |
Recommended Products
RES SMD 4.7K OHM 5% 1/20W 0201
IND DELAY LINE 60PS 3 OHM SMD
MEMS OSC XO 48.0000MHZ LVCMOS LV
CMR MICA
CAP CER 0.033UF 250V X7R 1812
CAP ALUM 33UF 20% 160V RADIAL
IC OSC VCXO QD FREQ 10CLCC
8D 37C 37#22D PIN RECP
CONN PLUG HSNG MALE 6POS INLINE
24-BIT, 192 KHZ STEREO DAC
