IMZA65R030M1HXKSA1
650 V|53A (Tc)|197W (Tc)
原装正品全球货源快速交付品质认证技术支持批量优惠
SILICON CARBIDE MOSFET, PG-TO247
规格参数
- 品牌
- Infineon Technologies
- 封装
- PG-TO247-4-3
- 包装方式
- —
库存总量
573个
12小时发货
起订量：1 个
认证与授权
产品视频
了解 Infineon Technologies 的 IMZA65R030M1HXKSA1 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。
- 原厂采购，全程可追溯
- 严格的进料品质检验
- 具竞争力的价格 & 全球快速交货
- 专属应用工程技术支持
技术规格
| Manufacturer | Infineon Technologies | |
| Series | CoolSiC™ | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 29.5A, 18V | |
| Vgs(th) (Max) @ Id | 5.7V @ 8.8mA | |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 18 V | |
| Vgs (Max) | +20V, -2V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1643 pF @ 400 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 197W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO247-4-3 | |
| Package / Case | TO-247-4 |
推荐产品
RES CHAS MNT 2.21K OHM 1% 10W
FIXED IND 5.6UH 195MA 1.8 OHM
MEMS OSC XO 75.0000MHZ H/LV-CMOS
CRYSTAL 24.00 MHZ 9.0PF SMD
CAP ALUM 25UF 16V AXIAL
LED XLAMP WARM WHITE 2850K 2SMD
LCD MOD CHAR 4X20 BLUE
JT 7C 7#20 SKT RECP
CONN PLG HSG FMALE 79POS INLINE
CONN EDGE DUAL FMALE 86POS 0.100
