Contact
Send MessageIMBG65R072M1HXTMA1
650 V|33A (Tc)|140W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
SILICON CARBIDE MOSFET PG-TO263-
Specifications
- Brand
- Infineon Technologies
- Package
- PG-TO263-7-12
- Packaging
- —
- Weight
- —
Total Inventory
2,466pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IMBG65R072M1HXTMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | CoolSIC™ M1 | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Rds On (Max) @ Id, Vgs | 94mOhm @ 13.3A, 18V | |
| Vgs(th) (Max) @ Id | 5.7V @ 4mA | |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 18 V | |
| Vgs (Max) | +23V, -5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 744 pF @ 400 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 140W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-7-12 | |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
Recommended Products
RES 1/4W 5% AXIAL
RES SMD 9.1K OHM 0.1% 1W 1206
MEMS OSC XO 3.5700MHZ H/LV-CMOS
CAP CER 680PF 50V C0G/NP0 0603
NMP CONFIGURABLE POWER SUPPLY 12
DGTL ISO 3.75KV 7CH SPI 20SSOP
IC DAS 12BIT 60K 8DIP
FUSE CERM 12A 250VAC 125VDC 3AB
CAP ALUM 6800UF 20% 63V SNAP
CONN EDGE DUAL FMALE 60POS 0.125
