Heisener Electronics
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IMB3AT110

50V|100mA|300mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS PREBIAS DUAL PNP SMT6

Specifications

Brand
Rohm Semiconductor
Package
SC-74, SOT-457
Packaging
—
Weight
—

Total Inventory

281pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IMB3AT110 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 5mA
Current - Collector Cutoff (Max)-
Frequency - Transition250MHz
Power - Max300mW
Mounting TypeSurface Mount
Package / CaseSC-74, SOT-457
Supplier Device PackageSMT6

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Datasheet & Documents

imb3at110.pdf

PDF Document · 9 pages

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