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HUFA76609D3ST

100V|10A (Tc)|49W (Tc)
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MOSFET N-CH 100V 10A DPAK

Specifications

Brand
Fairchild/ON Semiconductor
Package
TO-252AA
Packaging
—
Weight
—

Total Inventory

106,092pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how HUFA76609D3ST from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesUltraFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs160 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds425pF @ 25V
FET Feature-
Power Dissipation (Max)49W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

hufa76609d3st.pdf

PDF Document · 10 pages

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