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55V|-|50W (Tj)
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MOSFET N-CH 55V 8-DIP
Specifications
- Brand
- Honeywell Aerospace
- Package
- 8-CDIP-EP
- Packaging
- —
- Weight
- —
Total Inventory
166pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how HTNFET-D_1 from Honeywell Aerospace fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Honeywell Aerospace | |
| Series | HTMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 55V | |
| Current - Continuous Drain (Id) @ 25°C | - | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V | |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 100mA, 5V | |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | 4.3nC @ 5V | |
| Vgs (Max) | 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 28V | |
| FET Feature | - | |
| Power Dissipation (Max) | 50W (Tj) | |
| Operating Temperature | -55°C ~ 225°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | 8-CDIP-EP | |
| Package / Case | 8-CDIP Exposed Pad |
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