Heisener Electronics
BOM

HTNFET-DC

55V|-|50W (Tj)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 55V 8-DIP

Specifications

Brand
Honeywell Microelectronics & Precision Sensors
Package
-
Packaging
—
Weight
—

Total Inventory

2,496pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how HTNFET-DC from Honeywell Microelectronics & Precision Sensors fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerHoneywell Microelectronics & Precision Sensors
SeriesHTMOS?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs400 mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs4.3nC @ 5V
Vgs (Max)10V
Input Capacitance (Ciss) (Max) @ Vds290pF @ 28V
FET Feature-
Power Dissipation (Max)50W (Tj)
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device Package-
Package / Case8-CDIP Exposed Pad

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