HT8KE5TB1

100V|2.5A (Ta), 7A (Tc)|2W (Ta), 13W (Tc)

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MOSFET 2N-CH 100V 2.5A/7A 8HSMT

8,970个

12小时发货

购买数量

起订量：1 个

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了解 Rohm Semiconductor 的 HT8KE5TB1 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。

Manufacturer	Rohm Semiconductor
Series	-
FET Type	MOSFET (Metal Oxide)
FET Feature	-
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs	193mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	2.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	90pF @ 50V
Power - Max	2W (Ta), 13W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Supplier Device Package	8-HSMT (3.2x3)