Heisener Electronics
BOM

HT8KC5TB1

60V|3.5A (Ta), 10A (Tc)|2W (Ta), 13W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

60V 10A, DUAL NCH+NCH, HSMT8, PO

Specifications

Brand
Rohm Semiconductor
Package
8-PowerVDFN
Packaging
—
Weight
—

Total Inventory

9,000pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how HT8KC5TB1 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeMOSFET (Metal Oxide)
FET Feature-
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C3.5A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs90mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs3.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds135pF @ 30V
Power - Max2W (Ta), 13W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device Package8-HSMT (3.2x3)

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