Heisener Electronics
BOM

HT12G-A0G_1

100V|1A
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DIODE GEN PURP 100V 1A TS-1

Specifications

Brand
Taiwan Semiconductor Corporation
Package
T-18, Axial
Packaging
—
Weight
—

Total Inventory

362pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how HT12G-A0G_1 from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1V @ 1A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)50ns
Current - Reverse Leakage @ Vr5µA @ 100V
Capacitance @ Vr, F15pF @ 4V, 1MHz
Mounting TypeThrough Hole
Package / CaseT-18, Axial
Supplier Device PackageTS-1
Operating Temperature - Junction-55°C ~ 150°C

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