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30V|10A (Ta), 11A (Ta)|2W (Ta)
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30V NCH+NCH POWER MOSFET
Specifications
- Brand
- Rohm Semiconductor
- Package
- 8-UDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
4,622pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how HS8K1TB from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
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Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 11A (Ta) | |
| Rds On (Max) @ Id, Vgs | 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 6nC, 7.4nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 348pF, 429pF @ 15V | |
| Power - Max | 2W (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-UDFN Exposed Pad | |
| Supplier Device Package | HSML3030L10 |
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