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600V|1A
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DIODE GEN PURP 600V 1A SUB SMA
Specifications
- Brand
- Taiwan Semiconductor Corporation
- Package
- DO-219AB
- Packaging
- —
- Weight
- —
Total Inventory
144pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how HS1JL-R3G_1 from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Taiwan Semiconductor Corporation | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Current - Average Rectified (Io) | 1A | |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 1A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 75ns | |
| Current - Reverse Leakage @ Vr | 5µA @ 600V | |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | DO-219AB | |
| Supplier Device Package | Sub SMA | |
| Operating Temperature - Junction | -55°C ~ 150°C |
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