HP8ME5TB1

100V|3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc)|3W (Ta), 20W (Tc)

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MOSFET N/P-CH 100V 3A/8.5A 8HSOP

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12小时发货

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了解 Rohm Semiconductor 的 HP8ME5TB1 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。

Manufacturer	Rohm Semiconductor
Series	-
FET Type	MOSFET (Metal Oxide)
FET Feature	-
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs	193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	2.9nC @ 10V, 19.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	90pF @ 50V, 590pF @ 50V
Power - Max	3W (Ta), 20W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	8-HSOP