HN4K03JUTE85LF

20V|100mA (Ta)|200mW (Ta)

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MOSFET N-CH 20V 0.1A USV

132个

12小时发货

购买数量

起订量：1 个

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了解 Toshiba Semiconductor and Storage 的 HN4K03JUTE85LF 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。

Manufacturer	Toshiba Semiconductor and Storage
Series	-
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V
Rds On (Max) @ Id, Vgs	12Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	10V
Input Capacitance (Ciss) (Max) @ Vds	8.5pF @ 3V
FET Feature	-
Power Dissipation (Max)	200mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	USV
Package / Case	5-TSSOP, SC-70-5, SOT-353