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50V|150mA|100mW
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TRANS 2NPN 50V 0.15A ES6
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- SOT-563, SOT-666
- Packaging
- —
- Weight
- —
Total Inventory
279pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how HN2C01FEYTE85LF from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | 2 NPN (Dual) | |
| Current - Collector (Ic) (Max) | 150mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V | |
| Power - Max | 100mW | |
| Frequency - Transition | 60MHz | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Supplier Device Package | ES6 |
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