Heisener Electronics
BOM

HERAF808G

1000 V|8A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE GEN PURP 1KV 8A ITO220AC

Specifications

Brand
Taiwan Semiconductor Corporation
Package
TO-220-2 Full Pack
Packaging
—
Weight
—

Total Inventory

2,910pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how HERAF808G from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)1000 V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If1.7 V @ 8 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)80 ns
Current - Reverse Leakage @ Vr10 µA @ 1000 V
Capacitance @ Vr, F60pF @ 4V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-220-2 Full Pack
Supplier Device PackageITO-220AC
Operating Temperature - Junction-55°C ~ 150°C

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