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800 V|1 A
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BRIDGE RECT 1PHASE 800V 1A DBL
Specifications
- Brand
- Taiwan Semiconductor Corporation
- Package
- 4-DIP (0.300", 7.62mm)
- Packaging
- —
- Weight
- —
Total Inventory
15,000pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how HDBL106G from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Taiwan Semiconductor Corporation | |
| Series | - | |
| Diode Type | Single Phase | |
| Technology | Standard | |
| Voltage - Peak Reverse (Max) | 800 V | |
| Current - Average Rectified (Io) | 1 A | |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A | |
| Current - Reverse Leakage @ Vr | 5 µA @ 800 V | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | 4-DIP (0.300", 7.62mm) | |
| Supplier Device Package | DBL |
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