Heisener Electronics
BOM

HAT2210RWS-E

30V|7.5A (Ta), 8A (Ta)|1.5W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-PAK 8SOP

Specifications

Brand
Renesas Electronics America
Package
8-SOIC (0.154", 3.90mm Width)
Packaging
—
Weight
—

Total Inventory

200pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how HAT2210RWS-E from Renesas Electronics America fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRenesas Electronics America
Series-
FET Type2 N-Channel (Dual), Schottky
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7.5A (Ta), 8A (Ta)
Rds On (Max) @ Id, Vgs24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs4.6nC @ 4.5V, 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds630pF @ 10V, 1330pF @ 10V
Power - Max1.5W (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

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