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100V|25A (Ta)|30W (Tc)
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MOSFET N-CH LFPAK-5
Specifications
- Brand
- Renesas Electronics America
- Package
- 5-LFPAK
- Packaging
- —
- Weight
- —
Total Inventory
103pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how HAT2173HWS-E from Renesas Electronics America fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Renesas Electronics America | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V | |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 12.5A, 10V | |
| Vgs(th) (Max) @ Id | 6V @ 20mA | |
| Gate Charge (Qg) (Max) @ Vgs | 61nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4350pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 30W (Tc) | |
| Operating Temperature | 150°C | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 5-LFPAK | |
| Package / Case | SC-100, SOT-669 |
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