Heisener Electronics
BOM

HAT2168HWS-E

30V|30A (Ta)|15W (Tc)
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MOSFET N-CH LFPAK-5

Specifications

Brand
Renesas Electronics America
Package
5-LFPAK
Packaging
—
Weight
—

Total Inventory

247pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how HAT2168HWS-E from Renesas Electronics America fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1730pF @ 10V
FET Feature-
Power Dissipation (Max)15W (Tc)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device Package5-LFPAK
Package / CaseSC-100, SOT-669

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